AlGaN/GaN HEMT Large Signal Nonlinear Compact Model Accounting for Thermal Effects and Trapping Dispersion

摘要

A customized nonlinear compact model is applied to AlGaN/GaN HEMT devices for Power Amplifier applications. The model formulation is created to represent behavior specific to GaN HEMT devices. The model incorporates novel formulations for Ids equations, bias dependency of access resistances, charge storage, and dispersion models, tailored to GaN HEMT device behavior. The model has been used to generate nonlinear common-source models in frequency ranges of S-, Ku- and Ka-band processes. A typical 4x50um S-band and Ku-band device will be used to demonstrate the extraction and validation of the model, in which the model has predicted the DCIV, CW S Parameters, and LP results accurately.