Etching Characteristics of TaNO Thin Film for Top Electrode Materials Using Inductivity Coupled CF4/Ar Plasma

摘要

In this research, we investigated the etch rate of TaNO thin film and selectivity with mask material (SiO2) in inductively coupled CF4/Ar plasma. As the CF4 content increased from 0% to 80% in CF4/Ar plasma, the etch rate of TaNO thin film was increased from 56.1 to 495.3 nm/min. The results of X-ray photoelectron spectroscopy (XPS) showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of non-volatile byproducts on the etched surface of TaNO thin film.