PLASMA PROCESSING, THIN FILM FORMING AND ETCHING DEVICE BY A HIGH FREQUENCY INDUCTIVELY COUPLED PLASMA

摘要

An apparatus for processing a wafer surface using high frequency inductively coupled plasma is provided to achieve good process window by using a plasma generator for supplying reactive gas together with a plasma source to a wafer reaction unit. A plasma generator(1-1) and a wafer reaction unit(1-2) are incorporated to configure a process chamber(1). The process chamber induces reactive gas. The plasma generator is generates plasma and the wafer reaction unit is arranged on a lower section of the plasma generator. The wafer reaction unit selectively performs a plasma process, a thin film formation process, and a thin film etching process on a wafer. A pressure controller(18) is comprised of a pumping port(2), a two-stage valve(3), a turbo pump(4), and an APC(Adaptive Pressure Control) valve(5). The pressure controller is systematically connected to a vacuum tube(12) installed on the process chamber to control pressure and an amount of pumping in the process chamber.