INDUCTIVELY COUPLED PLASMA ETCHING OF Pb(Zr_xTi_(1-x)O_3 THIN FILMS IN Cl_2/C_2F_6/Ar AND HBr/Ar PLASMAS

摘要

Pb(Zr_xTi_(1-x))O_3 thin films were etched in an inductively coupled plasma by using various etch gases such as Cl_2/Ar, C_2F_6/Ar, Cl_2/C_2F_6/Ar and HBr/Ar. The etch rates and etch profiles for each etch gas were investigated. The faster etch rates were obtained in chlorine-containing etch gases (e.g., Cl_2/Ar and Cl_2/C_2F_6/Ar), and the clean and steep etch profiles were achieved in Cl_2/C_2F_6/Ar or HBr/Ar gases. The gas mixture of Cl_2 and C_2F_6 was proposed to give fast etch rate and steep sidewall angle of etched patterns. The optimum gas mixture of Cl_2/C_2F_6/Ar was found by varying the gas ratio of Cl_2 to C_2F_6. On the other hand, HBr/Ar gas as an alternative for the etching of Pb(Zr_xTi_(1-x))O_3 films was tried. The comparison of Cl_2/C_2F_6/Ar and HBr/Ar etch gases were made with respect to etch rate, etch profile and electrical properties.