Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

摘要

Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for their fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors in practical (opto)electronics such as signal transmission and logic circuit, etc. Herein, we report the gate-tunable anti-ambipolar devices on the basis of few-layer transition metal dichalcogenides (TMDs) heterostructures to gain higher information storage density. Our study shows that carrier concentration regulated by the gate voltage plays a major role in the "anti-ambipolar" behavior, where the drain-source current can only pass through in specific range of gate voltage (V-g) and it will be restrained if the V-g goes beyond the range. Several improved strategies were theoretically discussed and experimentally adopted to obtain higher current on/off ratio for the anti-ambipolar devices, such as choosing suitable p--pair, increasing carrier concentration by using thicker-layer TMDs, and so on. The modified SnS2/WSe2 device with the current on/off ratio exceeding 200 and on-state V-g ranging from -20 to 0 V was successfully achieved. On the basis of the anti-ambipolar field-effect transistors (FETs), we also reveal the potential of three-channel device unit for signal processing and information storage. With the equal quantity N of device units, 3(N) digital signals can be obtained from such three-channel devices, which are much larger than 2(N) ones obtained from traditional two-channel complementary metal oxide semiconductors (CMOS).