首页> 外国专利> PRODUCING 2-DIMENSIONAL TRANSITION METAL DICHALCOGENIDE-BASED ALLOY, TRANSISTOR INCLUDING 2-DIMENSIONAL TRANSITION METAL DICHALCOGENIDE-BASED ALLOY, AND METHOD FOR PRODUCING TRANSISTOR

PRODUCING 2-DIMENSIONAL TRANSITION METAL DICHALCOGENIDE-BASED ALLOY, TRANSISTOR INCLUDING 2-DIMENSIONAL TRANSITION METAL DICHALCOGENIDE-BASED ALLOY, AND METHOD FOR PRODUCING TRANSISTOR

机译:制备基于二维过渡金属二硫化二氢的合金,包含二维过渡金属二硫化二氢的晶体管以及制备晶体管的方法

摘要

The present invention relates to a transition metal dichalcogenide-based alloy. According to an embodiment of the present invention, a transition metal dichalcogenide-based alloy is made of a semiconductor 2-dimensional transition metal dichalcogenide-based compound (AC_2) and a metallic 2-dimensional transition metal dichalcogenide-based compound (BC_2). Also, the transition metal dichalcogenide-based alloy satisfies chemical formula, A_(1-)_xB_xC_2, wherein A can be any one selected from Mo and W, B can be any one selected among Nb, Ta, Ti, Zr, Hf, Tc, Re, Cu, Ga, In, Sn, Ge, and Pb, and C can be any one selected among S, Se, and te. A range of x can be more than 0.04 and less than 0.06.;COPYRIGHT KIPO 2017
机译:本发明涉及过渡金属二硫化氢基合金。根据本发明的一个实施方案,过渡金属二硫化二氢基化合物由半导体二维过渡金属二硫化二氢基化合物(AC_2)和金属二维过渡金属二硫化二氢基化合物(BC_2)制成。另外,过渡金属二硫化氢基合金满足化学式A_(1-)_ xB_xC_2,其中A可以是选自Mo和W的任何一种,B可以是选自Nb,Ta,Ti,Zr,Hf,Tc中的任何一种。 ,Re,Cu,Ga,In,Sn,Ge和Pb以及C可以是选自S,Se和te中的任何一种。 x的范围可以大于0.04且小于0.06。; COPYRIGHT KIPO 2017

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