...
首页> 外文期刊>CERAMICS INTERNATIONAL >Influence of A-site Ba substitution on microwave dielectric properties of (Ba_xMg_(1-x))(A_(0.05)Ti_(0.95))O_3 (A=Zr, Sn) ceramics
【24h】

Influence of A-site Ba substitution on microwave dielectric properties of (Ba_xMg_(1-x))(A_(0.05)Ti_(0.95))O_3 (A=Zr, Sn) ceramics

机译:A位Ba取代对(Ba_xMg_(1-x))(A_(0.05)Ti_(0.95))O_3(A = Zr,Sn)陶瓷的微波介电性能的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The microwave dielectric properties of (Ba_xMg_(1-x))(A_(0.05)Ti_(0.95))TiO_3 (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q ×f value decreased. The sintered (Ba_xMg_(1-x))(Zr_(0.05)Ti_(0.95))TiO_3 (called B_xMZT) ceramics had a permittivity in the range of 19.1-20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from -35 to-39 ppm/°C with increasing composition x. For sintered (Ba_xmg_(1-x))(Sn_(0.05)Ti_(0.95))TiO_3 (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q × f value increased from 120,000 to 37,000 (GHz), and the revalue increased from -50 to -3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_(0.1)Mg_(0.9))(Sn_(0.05)Ti_(0.95))TiO_3 ceramics exhibited dielectric constant of 20.5, Q ×f value of 37,000 (GHz), and a near-zero τ_f value of -3.3 ppm/°C sintered at 1210 °C for 4h.
机译:研究了用Ba代替A位的Mg,研究了(Ba_xMg_(1-x))(A_(0.05)Ti_(0.95))TiO_3(A = Zr,Sn)陶瓷的微波介电性能。微波介电性能与Ba含量相关。随着Ba含量从0.01增加到0.1,介电常数和τ_f值增加,但Q×f值减小。烧结的(Ba_xMg_(1-x))(Zr_(0.05)Ti_(0.95))TiO_3(称为B_xMZT)陶瓷的介电常数在19.1-20.6范围内,品质因数从180,000至25,000 GHz,并且温度系数变化随成分x的增加,谐振频率从-35至-39 ppm /°C下降。对于烧结的(Ba_xmg_(1-x))(Sn_(0.05)Ti_(0.95))TiO_3(称为B_xMST)陶瓷,介电常数从19增加到20.5,Q×f值从120,000增加到37,000(GHz),并且x值从0.01增加到0.1时,重估值从-50 ppm增加到-50 ppm /°C。当A = Sn和x = 0.1时,(Ba_(0.1)Mg_(0.9))(Sn_(0.05)Ti_(0.95))TiO_3陶瓷的介电常数为20.5,Q×f值为37,000(GHz),接近零τ_f值为-3.3 ppm /°C,在1210°C烧结4h。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号