首页> 外文学位 >Synthesis, processing, and microwave dielectric properties of barium zinc tantalate (Ba(Zn(1/3)Ta(2/3))O(3)) ceramics for wireless communications.
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Synthesis, processing, and microwave dielectric properties of barium zinc tantalate (Ba(Zn(1/3)Ta(2/3))O(3)) ceramics for wireless communications.

机译:无线通信用钽酸钡锌(Ba(Zn(1/3)Ta(2/3))O(3))陶瓷的合成,加工和微波介电性能。

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摘要

The relationships between the composition, processing, microstructure, and microwave dielectric properties of barium zirconate (BaZrO3) doped barium zinc tantalate (Ba(Zn1/3Ta2/3)O3) (BZT) ceramics were investigated. A conventional mixed oxide route was used to prepare undoped and doped (4 mol% of BaZrO3) BZT ceramics. Undoped BZT ceramics with over 96% theoretical density were obtained by sintering for 32 hours in a ZnO atmosphere. In contrast, undoped BZT ceramics sintered in air resulted in very low levels of densification (∼78%). One of the important conclusions of this study is that BaZrO3 additions were shown to enhance the densificadon of BZT ceramics, in both air and ZnO atmospheres. The average density of the barium zirconate doped BZT ceramics sintered at 1450°C for 2 hours in both sintering atmospheres was about 96%. The average Qdfo value for undoped BZT sintered 1450°C for 2 hours in air was 32,200 ± 1100 GHz, while the average density was 77.1%. The lower Qd fo values were attributed to the presence of water vapor in the pores of the ceramic microstructure. The average Qd fo value of BaZrO3 doped BZT ceramics sintered under identical conditions was 135,600 ± 2800 GHz and the average density was 96.6%. One important conclusion of this study is that the enhancement of Qdfo value of BZT ceramics may be linked to the enhancement of densification kinetics and the level of density achieved and also perhaps to the point defect chemistry changes introduced by doping and/or occurring during sintering. Consistent with prior reports, BaZrO3 doping was shown to cause a considerable decrease in the long-range ordering (LRO) of B-site cations as detected by x-ray diffraction (XRD). Our findings reported here show that, contrary to the line of thinking emphasized in much of the prior literature, the long-range ordering B-site cations may not be a predominant factor that controls the Qdfo of such microwave dielectrics as WT. This work shows, quantitatively, that the level of densification and uniformity of dopant concentrations has a significant influence on the observed Qdfo values of BZT ceramics.
机译:锆酸钡(BaZrO 3)掺杂钽酸钡锌(Ba(Zn 1/3 Ta )的组成,加工,微观结构与微波介电性能之间的关系研究了2/3 )O 3 )(BZT)陶瓷。采用常规的混合氧化物工艺制备了未掺杂和掺杂的(4 mol%BaZrO 3 )BZT陶瓷。通过在ZnO气氛中烧结32小时获得理论密度超过96%的未掺杂BZT陶瓷。相反,在空气中烧结的未掺杂BZT陶瓷致密化水平非常低(〜78%)。这项研究的重要结论之一是,在空气和ZnO气氛中,添加BaZrO 3 可以增强BZT陶瓷的致密性。在两种烧结气氛中在1450℃下烧结2小时的锆酸钡掺杂的BZT陶瓷的平均密度为约96%。 未掺杂 BZT在空气中1450°C烧结2小时的平均Q d f o 值为32,200± 1100 GHz,而平均密度为77.1%。 Q d f o 值较低的原因是陶瓷微结构的孔中存在水蒸气。在相同条件下烧结的BaZrO 3 掺杂的BZT陶瓷的平均Q d f o 平均值为135,600±2800 GHz平均密度为96.6%。这项研究的一个重要结论是BZT陶瓷的Q d f o 值的提高可能与致密化动力学的提高有关。所达到的密度水平,也可能是由于掺杂而引起的缺陷化学变化和/或在烧结过程中发生的化学变化。与以前的报道一致,BaXrO 3掺杂被证明会导致X射线衍射检测到的B位阳离子的长程有序的(LRO)降低减少 (XRD)。我们在这里报告的研究结果表明,与许多现有文献中所强调的思路相反,远程有序B位阳离子可能不是是控制Q 的主要因素。 d f o 像WT这样的微波电介质。这项工作定量地表明,致密化程度和掺杂剂浓度的均匀性对所观察到的Q d f o 值具有显着影响。 BZT陶瓷。

著录项

  • 作者

    Ra, Seunghyun.;

  • 作者单位

    University of Pittsburgh.;

  • 授予单位 University of Pittsburgh.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 183 p.
  • 总页数 183
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:47:48

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