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Dielectric Piezoelectric and Vibration Properties of the LiF-Doped (Ba0.95Ca0.05)(Ti0.93Sn0.07)O3 Lead-Free Piezoceramic Sheets

机译:掺杂LiF的(Ba0.95Ca0.05)(Ti0.93Sn0.07)O3无铅压电陶瓷板的介电压电和振动特性

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摘要

By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba0.95Ca0.05)(Ti0.93Sn0.07)O3 (BCTS) lead-free piezoceramic sheets. Using X-ray diffraction (XRD) and a scanning electron microscope (SEM), the inferences of the crystalline and surface microstructures were obtained and analyzed. Then, the impedance analyzer and d33-meter were used to measure the dielectric and piezoelectric characteristics. In this study, the optimum sintering temperature of the BCTS sheets decreased from 1450 °C to 1390 °C due to LiF doping. For the 0.07 wt % LiF-doped BCTS sheets sintered at 1390 °C, the piezoelectric constant (d33) is 413 pC/N, the electric–mechanical coupling coefficient (kp) is 47.5%, the dielectric loss (tan δ) is 3.9%, and the dielectric constant (εr) is 8100, which are all close to or even better than that of the pure undoped BCTS ceramics. The Curie temperature also improved, from 85 °C for pure BCTS to 140 °C for BCTS–0.07 LiF sheets. Furthermore, by using the vibration system and fixing 1.5 g tip mass at the end of the sheets, as the vibration frequency is 20 Hz, the proposed piezoelectric ceramic sheets also reveal a good energy harvesting performance at the maximum output peak voltage of 4.6 V, which is large enough and can be applied in modern low-power electronic products.
机译:通过常规的固态反应方法,使用少量的氟化锂(LiF)作为烧结促进剂,以改善(Ba0.95Ca0.05)(Ti0.93Sn0.07)O3(BCTS)铅的烧结和压电特性无压电陶瓷板。使用X射线衍射(XRD)和扫描电子显微镜(SEM),获得并分析了晶体和表面微观结构。然后,使用阻抗分析仪和d33-meter测量介电和压电特性。在这项研究中,由于LiF掺杂,BCTS片材的最佳烧结温度从1450°C降至1390°C。对于在1390°C下烧结的0.07 wt%的掺LiF的BCTS片材,压电常数(d33)为413 pC / N,机电耦合系数(kp)为47.5%,介电损耗(tanδ)为3.9 %,介电常数(εr)为8100,都接近于甚至优于纯无掺杂BCTS陶瓷。居里温度也有所提高,从纯BCTS的85°C升至BCTS–0.07 LiF片的140°C。此外,通过使用振动系统并在板的末端固定1.5 g尖端质量,当振动频率为20 Hz时,建议的压电陶瓷板在最大输出峰值电压4.6 V时也显示出良好的能量收集性能,它足够大,可用于现代低功耗电子产品。

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