GaN lasers on GaAs substrates using laser lift-off technique

摘要

GaN-based LDs with GaAs support were fabricated by separating the nitrides form the sapphire substrate using laser lift-off (LLO)technique. The threshold current and the threshold voltage were 78mA and 6.4V, respectively. Excellent mirror facets with high process yields were achieved due to cleavage on the GaAs substrates. The simulations gave the result that the thermal conductivity increases by bonding GaN side to the stem directly. The thermal resistance of 21℃/W was achieved in LDs using LLO technique.