Threshold voltage control range in variable threshold voltage fully-depleted SOI MOSFETs

摘要

The controllable range of the threshold voltage (V{sub}(th)) in fully-depleted SOI MOSFETs is limited by the inversion or accumulation condition of the SOI-buried oxide interface. We studied the film thickness dependence of the control range of V{sub}(th) analytically, with introducing a new device parameter γ'. Measured and simulated results of long channel devices were compared, and the origin of discrepancy between analysis and experiment was also discussed qualitatively taking the electron distribution in SOI film into consideration.