Memory operation of an AlGaAs/GaAs heterostructure FET with InAs quantum dots: near room temperature electric write and erase

摘要

An AlGaAs/GaAs heterostructure field effect transistor; with InAs quantum dots implanted in the barrier layer, has been developed. This device exhibits memory operation through a shift in the threshold voltage of the device. This shift can be explained by electron storage in the quantum dots. At 250K, the threshold voltage shift is approximately 0.1 V. This threshold shift is produced using a short writing time, less than 1 minute, at a positive bias and a long erase time of 10 minutes at a negative bias.