Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implantation after a Pre-amorphization Process

摘要

We report our kinetic Monte Carlo (kMC) study on the effect of carbon co-implantation during the pre-amorphization implant (PAI) process. We employed the BCA (binary collision approximation) approach for the acquisition of the initial as-implant dopant profile and the kMC method for the simulation of diffusion process during the annealing process. The simulation results implied that the carbon co-implantation effectively suppressed the boron diffusion due to recombination with interstitials. Also, we could compare the boron diffusion with the carbon diffusion by calculating the carbon reaction with interstitials. We found that boron diffusion was affected by the energy level of the carbon co-implantation clue to an enhancement of the trapping of interstitials between boron and interstitials.