Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implant posterior to Amorphization Process

摘要

We report our kinetic Monte Carlo (kMC) study of the carbon co-implant impact on the pre-amorphization implant (PAI) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion process during the annealing process. The simulation results implied that carbon co-implant significantly suppresses the boron diffusion due to the recombination with interstitials. Also, we could compare the boron diffusion profile with carbon by kMC calculation of the carbon reaction with interstitials. Further, we could find that boron diffusion is appreciably affected by the energy level of the carbon co-implant due the enhancement of the trapping phenomena of interstitials with boron atoms.