GaN Nano-Column Growth on a Si(111) Substrate by Using a Pt+Ga Alloy Seeding Method with MOCVD

摘要

Gallium-nitride nano-column arrays were grown on a platinum-coated Si(111) substrate by usingthe Pt+GaN alloy seeding method with metal-organic chemical vapor deposition (MOCVD). Twoimportant growth parameters were considered, the pre-deposition of the Ga source prior to gener-ating the droplets and the droplet formation temperature. The surface morphology and the opticalcharacterization of the grown GaN nano-columns were studied using scanning electron microscopy(SEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The SEM im-age reveals the vertical growth of GaN nano-columns. The growth of the GaN nano-columns wasconfirmed by EDX, which indicated that they were composed of gallium and nitrogen. The PLspectrum reveal a sharp peak at 366.7 nm with a full width at half maximum (FWHM) of 160 meV,which clearly indicated that the grown GaN nano-columns were highly crystalline in nature.