Dielectric properties of amorphous BaTiO_3 films deposited by RF magnetron sputtering

摘要

In the present paper, dielectric properties of a-BaTiO_3 films have been investigated as a function of frequency (10~(-1) to 10~5 Hz) and temperature (25-350 deg C) using the dielectric spectroscopy technique. Relaxation and ac-conductivity processes were analyzed in order to study charge transport in the bulk and at the electrode-film interfaces. It seems that the oxygen vacancies play an essential role in both processes.