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Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline silicon

机译:使用单晶硅的纳米尺度各向异性刻蚀制造3D分形结构

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When it comes to high-performance filtration, separation, sunlight collection, surface charge storage or catalysis, the effective surface area is what counts. Highly regular fractal structures seem to be the perfect candidates, but manufacturing can be quite cumbersome. Here it is shown - for the first time - that complex 3D fractals can be engineered using a recursive operation in conventional micromachining of single crystalline silicon. The procedure uses the built-in capability of the crystal lattice to form self-similar octahedral structures with minimal interference of the constructor. The silicon fractal can be used directly or as a mold to transfer the shape into another material. Moreover, they can be dense, porous, or like a wireframe. We demonstrate, after four levels of processing, that the initial number of octahedral structures is increased by a factor of 625. Meanwhile the size decreases 16 times down to 300 nm. At any level, pores of less than 100 nm can be fabricated at the octahedral vertices of the fractal. The presented technique supports the design of fractals with Hausdorff dimension D free of choice and up to D = 2.322.
机译:当涉及高效过滤,分离,阳光收集,表面电荷存储或催化时,有效表面积至关重要。高度规则的分形结构似乎是最理想的选择,但是制造可能非常麻烦。此处首次显示,可以在传统的单晶硅微加工中使用递归操作来设计复杂的3D分形。该程序利用晶格的内置功能来形成自相似的八面体结构,而对构造函数的干扰最小。硅分形可直接使用或用作将形状转移到另一种材料中的模具。此外,它们可以是致密的,多孔的或类似线框的。我们证明,经过四个级别的处理,八面体结构的初始数量增加了625倍。同时,尺寸减小了16倍,直到300 nm。在任何水平上,都可以在分形的八面体顶点处制造小于100 nm的孔。所提出的技术支持自由选择Hausdorff尺寸D且最大D = 2.322的分形的设计。

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