首页> 外国专利> PROTECTION OF ANGLES OF 3D MICROMECHANICAL STRUCTURES ON SILICON PLATE AT DEEP ANISOTROPIC ETCHING

PROTECTION OF ANGLES OF 3D MICROMECHANICAL STRUCTURES ON SILICON PLATE AT DEEP ANISOTROPIC ETCHING

机译:深各向异性刻蚀对硅板上3D微机械结构角的保护

摘要

FIELD: process engineering.;SUBSTANCE: invention can be used for fabrication of micromechanical structures. Protection of the angles of 3D micromechanical structures on silicon plate with crystallographic orientation (100) at deep anisotropic etching in water solution of KOH hydroxide comprises making of mask pattern with angles protection elements. The latter feature diagonal shape on topological mask and are arranged 45 degrees to the stiff centre outlines. Note here that sides of said 3D micromechanical structures are defined from definite conditions.;EFFECT: higher quality and yield of said structures.;6 dwg, 2 tbl
机译:领域:过程工程;实质:本发明可用于制造微机械结构。在氢氧化钾氢氧化物水溶液中进行深各向异性蚀刻时,对具有晶体取向的硅板上的3D微机械结构的角度进行保护(100)包括制作带有角度保护元件的掩模图案。后者在拓扑蒙版上具有对角线形状,并与刚性中心轮廓成45度角排列。在此注意,所述3D微机械结构的侧面是从确定的条件定义的;效果:所述结构的更高质量和产量; 6dwg,2tbl

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