Experimental Study on Wax Protective Coating for Wet Deep Silicon Etching Processes

摘要

In order to protect the finished structures on the front side during deep silicon wet etching processes, the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structures from the strong aqueous bases. By way of heating and vacuumization, the air bubbles are expelled from the coating to extend the protection duration. The air pressure in the sealed chamber is 0.026?7?Pa, and the temperature of the heated wafer is 300?℃. Two kinds of the wax are used, and the corresponding photos of the etched wafer and the protection times are given. In 75?℃ 10%KOH solution, the protection duration is more than 8?h.