Fabrication of semiconductor device used as e.g. photocell, involves providing crystalline silicon layer on recipient structure, forming metal silicide in crystalline silicon portion, and arid etching metal silicide to metal silicide

摘要

A layer of crystalline silicon (102) is provided on a recipient structure, metal silicide is formed in a portion of the crystalline silicon adjacent to an exposed major surface (103) of the layer of crystalline silicon, and the metal silicide is subjected to arid etching using an etchant selective to the metal silicide relative to the crystalline silicon, to obtain semiconductor device.