A simple approach to convex corner compensation in anisotropic KOH etching on a (100) silicon wafer

摘要

This paper reports a simple method of convex corner compensation for (1 0 0) silicon wafer etching in a KOH solution. A pattern-induced effect is introduced and utilized in the new compensation design. This compensation structure comprises three square patterns which are joined to the convex corner apex. The three squares surround the corner and prevent it from exposure to the etchant during KOH etching. The design is confirmed by comparing the graphic analysis of etched shapes with SEM photographs at different etching depths. Experimental results prove the high accuracy of this method. Using this new corner compensation design, excellent convex corners have been fabricated. Compared to conventional compensation structures, the new structure has the advantages of easy design and less requirement of the extra area.