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首页> 外文期刊>Journal of Micromechanics and Microengineering >EFFECTS OF [110]-ORIENTED CORNER COMPENSATION STRUCTURES ON MEMBRANE QUALITY AND CONVEX CORNER INTEGRITY IN (100)-SILICON USING AQUEOUS KOH
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EFFECTS OF [110]-ORIENTED CORNER COMPENSATION STRUCTURES ON MEMBRANE QUALITY AND CONVEX CORNER INTEGRITY IN (100)-SILICON USING AQUEOUS KOH

机译:[110]取向的角补偿结构对KOH水溶液对(100)硅中膜质量和凸角完整性的影响

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To preserve the shape of convex corners when etching in aqueous KOH, corner compensation structures have to be used. The etching of convex corners is due to the fact that some planes etch faster than others, resulting in a loss of the desired structure. By adding extra structures at these convex corners, these structures will be removed during etching resulting in the desired convex corners. The basic corner compensation structures reported in the literature are oriented along the [100] direction or the [110] direction. This paper shows a step-by-step analysis of the etching of these structures. The results show that the {411} planes are responsible for the undercutting, which implies that a perfect compensation of a convex corner using structures oriented along the [100] direction is not possible. Moreover, it is shown that each compensation structure leaves an imprint on the membrane, which cannot be removed by further etching, as the convex corner would otherwise be etched. [References: 5]
机译:为了在KOH水溶液中蚀刻时保留凸角的形状,必须使用角补偿结构。凸角的蚀刻是由于以下事实:某些平面的蚀刻速度快于其他平面,从而导致所需结构的损失。通过在这些凸角处添加额外的结构,这些结构将在蚀刻期间被去除,从而产生期望的凸角。文献中报道的基本拐角补偿结构沿[100]方向或[110]方向取向。本文显示了对这些结构蚀刻的分步分析。结果表明,{411}平面是底切的原因,这意味着不可能使用沿[100]方向定向的结构对凸角进行完美补偿。此外,示出了每个补偿结构在膜上留下印记,该印记不能通过进一步的蚀刻去除,因为否则将蚀刻凸角。 [参考:5]

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