Analytical Model for Performance Comparison of a Nanoscale Dual Material Double Gate Silicon on Insulator (SOI) and Silicon on Nothing (SON) MOSFET

摘要

A two dimensional analytical model of a fully depleted nano-scale Dual Material Double Gate (DMDG) SON MOSFET has been developed and overall performance comparison is made with an equivalent SOI MOSFET structure. Analytical simulation has been done to study the performance of silicon on insulator (SOI) and silicon on nothing (SON) MOSFETs by varying several structural and operational parameters. The introduction of a dual material gate in the front gate of the DMDG structure in a fully depleted SON MOSFET results in reduction of short channel effects due to a step-function in the surface potential profile. The current voltage model developed on the basis of threshold voltage model includes the effects of velocity saturation and channel length modulation to provide a vivid insight to the short channel behavior of our proposed model. The DMDG SON MOSFET presented in this work proves to be superior to its SOI counterpart as it exhibits lower threshold voltage roll-off due to its inherent immunity to various short channel effects which effectively increases its current drivability thereby enhancing device scalability and providing scope for further device miniaturization for better device performance. The results of our analytical modeling are found to be in good agreement with simulation results thereby establishing the accuracy of the proposed analytical model.