Stimulated creation of the SOI structures with Si nano-clusters by low-dose SIMOX technology

摘要

The peculiarities of a buried layer formation obtained by a co-implantation of O_2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2?10~(16) cm~(-2) and 1.8?10~(17) cm~(-2), respectively. It has been observed that annealing at 1150°C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of x-ray diffraction patterns and TEM images confirm formation of Si nanoclusters in the SiO _2 buried layer. The intensive luminescence with the maximum at 600 nm has been observed in the synthesized structures.