V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospekt Nauki, Kyiv, 03028, Ukraine;
silicon; nanocluster; buried layer; ion implantation; defects;
机译:通过低剂量SIMOX技术刺激创建具有Si纳米簇的SOI结构
机译:注入能量和注入剂量对低剂量SIMOX结构的影响
机译:1.3微米部分耗尽的SIMOX SOI技术与1.3微米批量技术的nMOS的老化分析
机译:通过低剂量SIMOX技术刺激与Si纳米簇的SOI结构的创建
机译:使用高通量16S rDNA T-RFLP技术表征PCB污染土壤和苜蓿根际中的微生物群落结构
机译:微流控技术促进人工细胞样结构的产生
机译:建设性技术决策的制定关于绝缘体上«硅的微电子元素系列»(SOI)结构,以提供创造各种功能目的外部影响的传感器的能力