Subthreshold Current Model for Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile

摘要

The paper presents a short-channel subthreshold current model for the double-gate (DG) MOSFETshaving Gaussian doping profile in the vertical direction of the channel. The subthreshold currentis assumed to be contributed mainly by the diffusion of carriers in the subthreshold regime ofoperation of the device. The two gates of the device are assumed to be identical in structures for thesimplicity of the model. The effects of channel length, channel doping and drain to source voltageon subthreshold current have been investigated. The asymmetric nature of the device resulted onlyfrom the location of the peak doping position of the Gaussian profile at any arbitrary position exceptat the middle of the channel thickness has been presented. The effect of the straggle parameteron subthreshold current of the device has also been included in the model. The proposed modelis validated by comparing the theoretical results with the simulation data obtained by using theATLAS." 2D device simulation software.