Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating body

摘要

An extended low temperature study of 0.13μm Partially-Depleted Silicon-On-Insulator nMOSFETs without body contact is carried out. The impact of HALO doping characteristics on device output performance is investigated. The electrical properties of the technology are explored in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied.