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Effects of negative low self-bias on hydrogenated amorphous carbon films deposited by PECVD technique

机译:负的低自偏压对通过PECVD技术沉积的氢化非晶碳膜的影响

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摘要

Hydrogenated amorphous carbon films (a-C:H) were deposited by plasma enhanced chemical vapour deposition using a planar RF discharge and pure methane gas The influence of the negative self-bias (varying from 0 to 400 V) on physical properties is investigated. The density of the materials, characterized by X4ay reflectivity, varies from 1.3 to 1.8 g/cm{sup}3. The lowest density obtained for the grounded (0 V) film is related to the porosity. Curvature measurements reveal high compressive stress (2.6 GPa) for the film deposited with a self-bias close to 100 V. These different behaviours are related with the different structures (polymerlike, diamondlike, graphitelike) depending on the self-bias used during the deposition process. It is also shown that in spite of these different structures, the surface energies calculated from contact angle measurements using different liquids are similar whatever the used self-bias.
机译:使用平面射频放电和纯甲烷气体,通过等离子体增强化学气相沉积法沉积氢化非晶碳膜(a-C:H)。研究了负自偏压(在0至400 V之间变化)对物理性能的影响。以X4ay反射率为特征的材料密度在1.3至1.8g / cm {sup} 3之间变化。接地(0 V)薄膜获得的最低密度与孔隙率有关。曲率测量表明,沉积的薄膜具有高的压缩应力(2.6 GPa),其自偏压接近100V。这些不同的行为与不同的结构(聚合物状,类金刚石,石墨状)有关,具体取决于沉积过程中使用的自偏压处理。还表明,尽管具有这些不同的结构,但无论使用何种自偏压,使用不同液体通过接触角测量得出的表面能都是相似的。

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