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The structural and optical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited using a direct current-plasma enhanced chemical vapour deposition (DC-PECVD) technique

机译:使用直流等离子体增强化学气相沉积(DC-PECVD)技术沉积的氢化非晶碳(a-C:H)薄膜的结构和光学性质

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摘要

Hydrogenated amorphous carbon (a-C:H) thin films were deposited using the DC plasma enhanced chemical vapour deposition (DC-PECVD) technique. The effects of the deposition parameters (chamber pressure, electrode distance, CH4 flow rate, and substrate temperature) on the deposition rate were studied. It was found that with increasing DC power, w and hence ion bombardment energy, E the deposition rate increased initially and then decreased after passing a maximum. The increase in deposition rate of the a-C:H films with increasing ion energy is explained by the increase in the concentration of dangling bond sites on the growing film surface. Further analyses which were based on the films, revealed the optimum deposition rate for every set of deposition parameters. Both power and ion bombardment energy were continuously changing during the deposition, as a results of varying deposition parameters. The films properties ranged from polymer-like (PAC) to graphite-like (GAC) a-C:H films, as the power and ion energy increased. In order to study the structure and the optical properties of a-C:H films, infrared and Raman spectroscopy, XRD, SEM, Ellipsometer, UV-Vis Spectrophotometer and photoluminescence, were used as characterization techniques to extract information on sp3/sp2 and hydrogen contents, amorphous nature, morphology, optical gap, E0, absorption coefficient, a, photoluminescence response, refractive index, n, and extinction coefficient, k, of the a-C:H films. Based on these results, the films studied in the present research are found to consist of sp2 clusters of which their size increases with increasing power and ion bombardment energy during the deposition, resulting in lower hydrogen, sp3 content and optical gap. This confirms the model proposed by Robertson where sp2 content controls the optical gap. The increase in hydrogen freed from the films at higher ion energies results in an increase in the sp2 fraction, bigger cluster size and graphitic structures of the films.
机译:使用直流等离子体增强化学气相沉积(DC-PECVD)技术沉积氢化非晶碳(a-C:H)薄膜。研究了沉积参数(腔室压力,电极距离,CH4流速和衬底温度)对沉积速率的影响。发现随着直流功率w和离子轰击能量E的增加,沉积速率先增加,然后在达到最大值后降低。 a-C:H薄膜的沉积速率随离子能量的增加而增加,这可以通过生长薄膜表面上悬挂键位的浓度增加来解释。基于薄膜的进一步分析显示了每组沉积参数的最佳沉积速率。由于沉积参数的变化,功率和离子轰击能量在沉积过程中都在不断变化。随着功率和离子能量的增加,薄膜的性能从类聚合物(PAC)到类石墨(GAC)a-C:H薄膜不等。为了研究aC:H膜的结构和光学特性,使用红外和拉曼光谱,XRD,SEM,椭圆仪,紫外可见分光光度计和光致发光作为表征技术,提取有关sp3 / sp2和氢含量的信息, aC:H薄膜的非晶性质,形态,光学间隙E0,吸收系数a,光致发光响应,折射率n和消光系数k。基于这些结果,发现本研究中的膜由sp2簇组成,其尺寸随着沉积过程中功率和离子轰击能量的增加而增加,从而导致氢,sp3含量和光学间隙降低。这证实了罗伯逊提出的模型,其中sp2含量控制光学间隙。在较高的离子能量下从薄膜中释放出的氢的增加导致sp2分数的增加,更大的簇尺寸和薄膜的石墨结构。

著录项

  • 作者

    Abu Bakar Suriani;

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  • 年度 2005
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  • 原文格式 PDF
  • 正文语种 en
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