Microstructural changes and optical properties of laser annealed bismuth-implanted silicon

摘要

The implantation of heavy atoms is of great interest since it is a basis when creating electronic and optoelectronic devices for operation under a high temperature or reactive environment. Corresponding surface irradiation effects such as laser annealing are extensively applied, since it leads to quite appropriate modification of the surface. In our experiment, using transmission and scanning electron microscopy applied in combination with sensitive analytical methods, the microstructure of Bi+-implanted and laser-annealed silicon is characterized. Recrystallisation of Bi-implanted silicon is recorded, after laser annealing. The obtained experimental results on bismuth-implanted silicon up to very high bismuth fluence, are of special interest due to the recorded Bi nanocrystal formation in amorphized silicon layers. Optical characteristics of specimens are also measured using a tunable laser control system. (C) 2002 Elsevier Science Ltd. All rights reserved. [References: 16]