Formation of device isolation in GaAs with polyenergetic ion implantation

摘要

A method of the formation of device isolation in III-V semiconductors is considered. The method is based on the creation of a uniform concentration of radiation defects by polyenergetic ion implantation. A numerical model as well as a computer program have been developed which enabled us to find optimal energy and dose sets for polyenergetic ion implantation, necessary to form high-quality insulating layers. Experiments on the formation of isolation in GaAs have been carried out. The electric properties and the thermal stability of the implanted regions have been investigated.