The manner null which forms ion implantation active formation in the GaAs substrate

摘要

PURPOSE:To enable characteristics to be uniform by performing ion implantation of added elements using a GaAs crystal for a substrate and by depositing a III-V compound semiconductor thin film including In within constitution elements previously on a surface of the GaAs substrate in forming an active layer within the substrate by performing its heat treatment. CONSTITUTION:An InGaP thin film 2 is allowed to grow on a GaAs substrate 1 and a photo resist mask pattern 3 is formed on it and an Si element 4 is ion-implanted, thus forming an ion-implantation layer 5 within the substrate. After incinerating the mask pattern 3 by oxygen plasma treatment and then eliminating it, it is dipped into hydrochloric acid, thus enabling the mask pattern 3 and the InGaP thin film 2 to be eliminated completely. Further, an SiN film 6 is deposited as a thermally treated protection film and the Si element 4 of an ion-implantation layer 55 is activated by performing heat treatment, thus enabling an ion-implantation active layer 7 to be produced. Therefore, an ion- implantation active layer with a uniform characteristic within a substrate surface or between substrates can be obtained.