Effects induced by oxide thickness variations in nanoscale MOSFET devices

摘要

A new linearization technique is developed for the analysis of oxide roughness induced fluctuation effects in nanoscale semiconductor devices. This technique is based on the linearization (perturbation) anlysis and is applied to the analysis of oxide thickness variations in Metal-Oxide-Semiconductor Field-Effect- Transistors (MOSFET). The oxide thickness is considered a random variable in the framework of the transport equations and all fluctuating quantities are linearized around their average values. Numerical results for nanoscale MOSFET devices are presented for the fluctuations of the terminal currents and threshold voltage. Quantum mechanical effects are taken into consideration by using the Density-Gradient model.