Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

Misiuk A; Surma B; Bak-Misiuk J

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Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

机译：光致发光检测高温高压处理的切克劳斯基硅中的缺陷及相关方法

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Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720-1000 K under 10(5) Pa and next treated at 1170-1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence, infrared absorption and related methods. Microstructure of HT-HP treated Cz-Si is critically dependent on nucleation centres for oxygen precipitation created by pre-annealing.

机译：含氧的Czochralski硅（Cz-Si）的缺陷在720-1000 K在10（5）Pa下经过2步预退火，然后在高静水压力（HP，向上）下在1170-1400 K（HT）处理至1.2GPa）通过光致发光，红外吸收和相关方法进行研究。经HT-HP处理的Cz-Si的微观结构在很大程度上取决于成核中心的预退火产生的氧沉淀。

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《The European physical journal. Applied physics》 |2004年第3期|共3页
作者
Misiuk A; Surma B; Bak-Misiuk J;
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正文语种 eng
中图分类物理学;
关键词
ENHANCED STRESS CONDITIONS; OXYGEN PRECIPITATION; SI;

机译：增强应力条件;氧沉淀;SI;

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1. Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods [J] . Misiuk A, Surma B, Bak-Misiuk J The European physical journal. Applied physics . 2004,第1a3期

机译：光致发光检测高温高压处理的切克劳斯基硅中的缺陷及相关方法
2. Microstructure of high temperature-pressure treated nitrogen-doped Czochralski silicon [J] . D. Yang, D. Tian, J. Xu Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2004,第1a2期

机译：高温高压氮掺杂直拉硅的显微组织
3. The microstructure and electrical properties of hydrogenated Czochralski silicon treated at high temperature-pressure [J] . Misiuk A., Ratajczak J., Surma B., Journal of Physics. Condensed Matter . 2003,第43期

机译：高温高压下处理的直拉硅氢化物的微观结构和电性能
4. Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C [C] . V.V. Emtsev, A.V. Mudryi, V.V. Emtsev Jr., International conference on defects in semiconductors . 2003

机译：在600℃处理Czochralski生长硅热硅热缺陷的光致发光表征
5. Investigation of defects in N-type 4H-silicon carbide and semi-insulating 6H-silicon carbide using photoluminescence spectroscopy. [D] . Chanda, Sashi Kumar. 2005

机译：使用光致发光光谱法研究N型4H碳化硅和半绝缘6H碳化硅中的缺陷。
6. Investigation of diffusion length distribution on polycrystalline silicon wafers viaphotoluminescence methods [O] . Shishu Lou, Huishi Zhu, Shaoxu Hu, -1

机译：多晶硅片上扩散长度分布的通孔研究光致发光方法
7. Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure [O] . Wierzchowski W., Misiuk A., Wieteska K., 2005

机译：氦氢共注入高温高压处理的直拉硅的缺陷结构。
8. Development of Advanced Methods for Continuous Czochralski Growth. Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. First Quarterly Progress Report, October 4--December 30, 1977 [R] . Wolfson, R. G., Sibley, C. B. 1978

机译：连续Czochralski生长的先进方法的发展。低成本硅太阳能电池阵项目大面积硅片任务的硅片增长发展。 1977年10月4日至12月30日的第一季度进展报告

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

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