SILICON WAFER HAVING CONTROLLED DEFECT DISTRIBUTION, ITS MANUFACTURING METHOD AND CZOCHRALSKI PULLER FOR MANUFACTURING SINGLE CRYSTAL SILICON INGOT

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer having a controlled defect distribution by which a denude zone can be sufficiently secured adjacent to the surface of a wafer and an enough gettering effect be obtained in the bulk area of the wafer. ;SOLUTION: In this silicon wafer, the concentration profile of oxygen deposition from the front to back of the silicon wafer where the active area of a semiconductor device is formed shows first and second peaks at specified depths from the front and back, respectively, and a denude zone is formed before the concentration reaches the first and second peaks from the front and back respectively, and then the concentration profile of oxygen deposition is recessed in the bulk area between the first and second peaks. Thus, the silicon wafer has a such a controlled distribution of oxygen deposition.;COPYRIGHT: (C)2001,JPO