Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C

摘要

In the present work new results on the formation of oxygen- and carbon-related luminescence centers in Cz-Si heat treated at T = 600°C are reported. Some characteristic features of thermal defect formation dependent on the heat treatment regimes were studied. At the early stages of heat treatment two intense electron-vibronic bands with zero-phonon lines at 0.767 eV (P-line) and 0.926 eV (H-line), both associated with oxygen and carbon impurity atoms, are observed in spectra. More than forty narrow Sj lines are superimposed on a broad band in the spectral range from 1.13 to 0.96eV. Analysis of these lines allows us to attribute them to the centers containing carbon and oxygen. Certain regularity in the positions of some Sj lines was found for the first time.