Microstructure of high temperature-pressure treated nitrogen-doped Czochralski silicon

摘要

Microstructure of the oxygen precipitates and of the annealing induced defects in nitrogen-doped Czochralski (NCZ) and conventional (CZ) silicon subjected to two-steps treatment under high pressure (HP) up to 1.1 GPa has been investigated by means of photoluminescence (PL) spectroscopy. It has been found that the creation of oxygen precipitates and defects in the CZ-Si and NCZ-Si subjected to the high pressure heat treatments (HT-HP) at up to 1130 deg C is dependent both on annealing temperature (HT) and HP. Nitrogen doping affects the microstructure of NCZ-Si so that PL spectra of HT-HP treated NCZ-Si are different from these of CZ-Si.