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Nitrogen-doped vacancy-dominant silicon ingot and heat-treated wafer formed therefrom having a density and size of radially uniformly distributed oxygen precipitates
Nitrogen-doped vacancy-dominant silicon ingot and heat-treated wafer formed therefrom having a density and size of radially uniformly distributed oxygen precipitates
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机译:氮掺杂的空位占优势的硅锭和由其形成的热处理晶片,其密度和尺寸呈放射状均匀分布的氧沉淀物
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摘要
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.
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