Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

摘要

Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.