Defect Formation in Epitaxial Layers of Cadmium Mercury Telluride Solid Solutions Highly Doped with Indium

摘要

We have studied the effect of strong (up to 5 × 10{sup}21 cm{sup}(-3)) indium doping on the behavior of components in cadmium mercury telluride solid solutions. At an indium concentration in a modified subsurface layer on the order of 10{sup}21 cm{sup}(-3), these layers are depleted of mercury and cadmium; simultaneously, cadmium is segregated in the region immediately below the indium-doped surface layer. The strong doping with indium leads to the formation of extended defects, which is manifested by characteristic patterns in electron micrographs observed after chemical etching. The observed redistribution of the solid solution components upon doping is explained by peculiarities of the defect formation in cadmium mercury tellurides.