Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0-2.5 mu m wavelength range

摘要

We have studied and optimized the properties of photodiodes with a red photosensitivity threshold at 2.5 mu m, which have been created on the basis of GaSb/GaInAsSb/AlGaAsSb heterostructures with Ga0.76In0.24As0.22Sb0.78 active regions of variable thickness and a reflecting contact on the rear side. It is established that a decrease in the thickness of the active region and the reflection of radiation from the rear side lead to an improvement in the parameters of photodiodes and related thermophotovoltaic converters in the 1.0-2.5 mu m wavelength range. The optimized structures showed a detection ability of D*(lambda) = (3-6) x 10(10) stop cm Hz(1/2)/W and an open-circuit photo emf up to V-oc = 0.2 V.