Long-wavelength photodiodes based on n-GaSb-GaInAsSb/p-AlGaAsSb heterostructures

摘要

Photodiodes sensitive in the wavelength ranges 1-2.5 mu m and 1-4.8 mu m at room temperature have been created on the basis of n-GaSb-GaInAsSb/p-AlGaAsSb double-junction heterostructures of two types. The broadband photosensitivity of the diode structures of both types is indicative of the complete separation of photogenerated electron-hole pairs in the staggered n-p heterojunction (n-GaInAsSb/p-AlGaAsSb). The noise characteristics of photodetectors based on the proposed diode structures have been studied. Prospects of the use of these devices in thermophotovoltaic cells for low-temperature radiation sources are considered.