首页> 外国专利> PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS AND METHOD FOR IMPROVING TOPOLOGICAL UNIFORMITY OF THE PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS BASED ON THIN-FILM ELECTRONICS

PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS AND METHOD FOR IMPROVING TOPOLOGICAL UNIFORMITY OF THE PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS BASED ON THIN-FILM ELECTRONICS

机译:平板X射线成像器中的光电二极管和其他传感器结构及其基于薄膜电子器件的平板X射线成像器中的光电二极管和其他传感器结构的拓扑均匀性

摘要

The invention concerns a radiation sensor comprising:a photoconductor detector including in order a first electrode, a photoconductive layer, and an ionizing radiation transmissive second electrode, and said photoconductive layer configured to generate electron-hole pairs upon interaction with ionizing radiation;pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of said electron-hole pairs generated in the photoconductive layer;a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry;a surface of at least one of said first electrode and said second electrode at least partially overlapping the pixel circuitry and having a planar portion and a surface inflection above features of the pixel circuitry; andsaid surface inflection extending from said planar portion and having, from said planar portion, a radius of curvature greater than one half micron.
机译:本发明涉及一种辐射传感器,包括:一种光电导体检测器,包括顺序第一电极,光电导层和电离辐射透射第二电极,以及所述光电导层,所述光电导层构造成在与电离辐射相互作用时产生电子孔对;像素电路电连接到第一电极,并且被配置为测量指示在光电导层中产生的所述电子空穴对的成像信号;设置在第一电极和像素电路之间的像素电路上的平坦化层,使得第一电极高于包括像素电路的平面;所述第一电极和所述第二电极中的至少一个的表面至少部分地重叠像素电路并具有平面部分和像素电路的特征的表面折射;和所述表面拐线从所述平面部分延伸并具有从所述平面部分,曲率半径大于半微米。

著录项

  • 公开/公告号EP3447802B1

    专利类型

  • 公开/公告日2021-04-21

    原文格式PDF

  • 申请/专利权人

    申请/专利号EP20180197740

  • 发明设计人 ANTONUK LARRY E;

    申请日2010-06-16

  • 分类号H01L27/146;G01T1/20;H01L31/105;G01T1/208;G01T1/24;

  • 国家 EP

  • 入库时间 2022-08-24 18:19:08

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