RECONSTRUCTION-DEPENDENT ELECTRON-HOLE RECOMBINATION ON GAAS(001) SURFACES STUDIED BY USING NEAR-SURFACE QUANTUM WELLS

摘要

Using an ultrahigh-vacuum photoluminescence system, electron-hole recombination on clean reconstructed GaAs(001) surfaces is characterized by measuring photoluminescence spectra of near-surface quantum wells. The luminescence from the quantum well with an As-rich (2 x 4) surface is stronger than that with a Ga-rich (4 x 6) surface, showing that the surface recombination is faster with (4 x 6) than with (2 x 4). [References: 35]