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Fast and accurate quasi-three-dimensional capacitance determinationof multilayer VLSI interconnects

机译:多层VLSI互连的快速准确的准三维电容确定

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A new fast and accurate capacitance determination methodology fornintricate multilayer VLSI interconnects is presented. Since a multilayerninterconnect structure is too complicated to be directly tractable, itnis simplified by investigating charge distributions within the system.nThe quasi-three-dimensional (3-D) capacitances of the structure are thenndetermined by combining a set of solid-ground-based two-dimensionaln(2-D) capacitances and shielding effects that can be independentlyncalculated from the simplified structure. The shielding effects due tonthe neighboring lines of a line can be analytically determined from thengiven layout dimensions. The solid-ground-based 2-D capacitances cannalso be quickly computed from the simplified structure. Thus, thenproposed capacitance determination methodology is much morencost-efficient than conventional 3-D-based methods. It is shown that thencalculated quasi-3-D capacitances have excellent agreement with 3-Dnfield-solver-based results within 5% error
机译:提出了一种用于复杂多层VLSI互连的快速,准确的电容确定方法。由于多层互连结构太复杂而无法直接处理,因此可以通过研究系统内的电荷分布来简化它。n然后通过结合一组基于固体的接地电容确定结构的准三维(3-D)电容可以从简化结构中独立计算出的三维(2-D)电容和屏蔽效果。可以根据给定的布局尺寸来分析确定线的相邻线所引起的屏蔽效果。还可以根据简化的结构快速计算基于固体接地的二维电容。因此,然后提出的电容确定方法比传统的基于3D的方法更具成本效益。结果表明,所计算的准3-D电容与基于3-Dnfield-solver的结果具有极佳的一致性,误差在5%之内

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