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Modeling and extraction of interconnect capacitances for multilayer VLSI circuits

机译:多层VLSI电路互连电容的建模和提取

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摘要

We report an accurate and practical method of estimating interconnect capacitances for a given circuit layout. The method allows extraction of the complete circuit level capacitances at each node in the circuit. The layout geometry is reduced into base elements that consist of different vertical profiles at each node in the layout. Accurate analytical models are developed for calculating capacitances of multilayer structures using a 2D capacitance simulator TDTL. These models are then transformed into 3D geometry. The resulting model capacitance values are found to be within 10% of both the measured data and 3D simulations of structures that are prevalent in typical VLSI chips. The models and their coefficients for different vertical profiles are stored in the capacitance extraction tool CUP, which is coupled to the layout extractor HILEX. As each base element has a unique vertical profile, the corresponding capacitance can easily be calculated for each node that is then written out to a circuit netlist. The comparisons of the models with the measured data, as well as 3D simulations results, are also discussed.
机译:我们报告了一种针对给定电路布局估算互连电容的准确而实用的方法。该方法允许提取电路中每个节点处的完整电路级电容。将布局几何简化为基本元素,这些基本元素在布局的每个节点处都包含不同的垂直轮廓。开发了用于使用2D电容模拟器TDTL计算多层结构的电容的精确分析模型。然后将这些模型转换为3D几何形状。发现所得的模型电容值在典型的VLSI芯片中普遍存在的结构的测量数据和3D模拟的10%范围内。不同垂直轮廓的模型及其系数存储在电容提取工具CUP中,该工具耦合到布局提取器HILEX。由于每个基本元件具有唯一的垂直轮廓,因此可以轻松地为每个节点计算出相应的电容,然后将其写到电路网表中。还讨论了模型与实测数据的比较,以及3D仿真结果。

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