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CMOS Bandgap References With Self-Biased Symmetrically Matched Current–Voltage Mirror and Extension of Sub-1-V Design

机译:具有自偏置对称匹配电流电压镜的CMOS带隙基准和Sub-1V设计的扩展

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摘要

A series of bandgap references (BGRs) using a self-biased symmetrically matched current–voltage mirror (SM CVM) in reducing systematic offset, thus achieving an excellent line regulation, is presented. By replacing the operational amplifier with a CVM in the feedback loop, current consumption is much reduced. An SM buffer stage that is capable of driving a resistive load with minor degradation in temperature coefficient (TC) and line regulation is also presented. The technique is extended to design a sub-1-V BGR with a TC-cancellation output buffer. All circuits are designed using a 0.35-$muhbox{m}$ CMOS process, and experimental results are presented, confirming the analysis.
机译:提出了一系列使用自偏置对称匹配电流-电压镜(SM CVM)的带隙基准(BGR),以减少系统失调,从而实现出色的线路调节。通过在反馈环路中将运算放大器替换为CVM,可以大大降低电流消耗。还介绍了一种SM缓冲级,该级能够驱动电阻性负载,并且温度系数(TC)和线路调节性能略有下降。该技术已扩展为设计具有TC取消输出缓冲器的低于1V的BGR。所有电路均采用0.35- $ muhbox {m} $ CMOS工艺设计,并给出了实验结果,证实了分析结果。

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