Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS

摘要

A low-voltage bandgap reference (BGR) circuit is designed and fabricated in a 90 nm CMOS technology. To mitigate error resulting from the mismatch in temperature dependency of the current in the output current mirror device and that of the BGR core, an output-regulated current mirror is incorporated. Experimental results show that the output voltage is 497.2 mV at 25u000b0;C with a temperature coefficient of 28.3 ppm/u000b0;C between -40u000b0;C and 80u000b0;C. The circuit occupies 0.0337 mm2 and dissipates 276.6 pW with a supply voltage of 1.2 V.