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The Impact of NBTI Effect on Combinational Circuit: Modeling, Simulation, and Analysis

机译:NBTI效应对组合电路的影响:建模,仿真和分析

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摘要

Negative-bias-temperature instability (NBTI) has become the primary limiting factor of circuit life time. In this paper, we develop a hierarchical framework for analyzing the impact of NBTI on the performance of logic circuits under various operation conditions, such as the supply voltage, temperature, and node switching activity. Given a circuit topology and input switching activity, we propose an efficient method to predict the degradation of circuit speed over a long period of time. The effectiveness of our method is comprehensively demonstrated with the International Symposium on Circuits and Systems (ISCAS) benchmarks and a 65-nm industrial design. Furthermore, we extract the following key design insights for reliable circuit design under NBTI effect, including: 1) During dynamic operation, NBTI-induced degradation is relatively insensitive to supply voltage, but strongly dependent on temperature; 2) There is an optimum supply voltage that leads to the minimum of circuit performance degradation; circuit degradation rate actually goes up if supply voltage is lower than the optimum value; 3) Circuit performance degradation due to NBTI is highly sensitive to input vectors. The difference in delay degradation is up to 5$times $ for various static and dynamic operations. Finally, we examine the interaction between NBTI effect, and process and design uncertainty in realistic conditions.
机译:负温度不稳定性(NBTI)已成为电路寿命的主要限制因素。在本文中,我们开发了一个层次结构框架,用于分析NBTI在各种工作条件(例如电源电压,温度和节点切换活动)下对逻辑电路性能的影响。给定电路拓扑和输入开关活动,我们提出了一种有效的方法来预测长时间内电路速度的下降。国际电路和系统专题讨论会(ISCAS)基准测试和65纳米工业设计全面证明了我们方法的有效性。此外,我们提取了以下关键设计见解,以便在NBTI效应下进行可靠的电路设计,包括:1)在动态工作期间,NBTI引起的退化对电源电压相对不敏感,但强烈依赖于温度; 2)有一个最佳电源电压,可将电路性能下降降至最低;如果电源电压低于最佳值,电路退化率实际上会上升; 3)由于NBTI而导致的电路性能下降对输入矢量高度敏感。对于各种静态和动态操作,延迟降级之间的差异高达5倍。最后,我们研究了NBTI效应与现实条件下工艺和设计不确定性之间的相互作用。

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