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Time-Domain CMOS Temperature Sensors With Dual Delay-Locked Loops for Microprocessor Thermal Monitoring

机译:具有双延迟锁定环路的时域CMOS温度传感器,用于微处理器热监控

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摘要

We report on CMOS temperature sensors that work by measuring temperature-dependent delays in CMOS inverters. Two new features distinguish this work from the prior delay-based temperature sensors. First, our sensor operates with simple, low-cost one-point calibration. Second, it uses delay-locked loops (DLLs) to convert inverter delays to digital temperature outputs: the use of DLLs enables low energy (0.24 $mu$ J/sample) and high bandwidth (5 kilo-samples/s), facilitating fast thermal monitoring. After calibration, measurement errors for 15 chips fabricated in digital CMOS 0.13 $mu$ m fall within $-4.0sim 4.0, ^{circ}{hbox {C}}$ in a temperature range of $0sim 100, ^{circ}{hbox {C}}$ , where the temperature chamber used has a control uncertainty of $pm 1.1, ^{circ}{hbox {C}}$ . Microprocessor thermal profiling can be a potential application.
机译:我们报告了通过测量CMOS反相器中与温度有关的延迟来工作的CMOS温度传感器。两项新功能使这项工作与以前的基于延迟的温度传感器区别开来。首先,我们的传感器通过简单,低成本的单点校准进行操作。其次,它使用延迟锁定环(DLL)将逆变器延迟转换为数字温度输出:DLL的使用实现了低能耗(0.24μμJ/ sample)和高带宽(5 km-samples / s),便于快速进行热监控。校准后,在$ 0sim 100,^ {circ} {的温度范围内,用数字CMOS 0.13μm$ m制造的15个芯片的测量误差落在$ -4.0sim 4.0,^ {circ} {hbox {C}} $之内。 hbox {C}} $,其中使用的温度室的控制不确定性为$ pm 1.1,^ {circ} {hbox {C}} $。微处理器热分析可能是一个潜在的应用。

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